Transistors/ Drivers/ Amplifiers GaN Qorvo

Announcing the latest additions to Qorvo's innovative RF portfolio of of GaN transistors and amplifiers, which serve a wide range of defense radar, satellite communications and wireless 5G infrastructure systems.

90 W, 48 V, DC-3,6 GHz GaN RF Transistor

QPD0060 Features

Freq : DC-3.6 GHz Output power (P3 dB) : 89 W Linear gain : 19.5 dB

Max DE : 75% 7,2 x 6,6 mm DFN package Ideal for wireless infrastructure & military communications

Additional Information : QPD0060

75 W, 48 V, DC-3,6 GHz GaN RF Transistor

QPD0050 Features

Freq : DC-3.6 GHz Output power (P3dB) : 75 W Linear gain : 22 dB

Max DE : 78% 7,2 x 6,6 mm DFN package Ideal for wireless infrastructure & military communications

Additional information : QPD0050

High Gain 0,5 W Driver Amplifier

QPA9121 Features

Freq: 2 300 - 5 000 MHz 50 ohm matched RF input & output Gain : 28 dB

Output P3 dB: +27 dBm 3 x 3 mm QFN package Ideal for TDD & 5G massive MMO systems

Additional information : QPA9121

5 - 6 GHz 60 W GaN Power Amplifier

QPA2308 Features

Freq : 5 - 6 GHz PSAT : 48 dBm PAE : 47%

Large signal gain : 22 dB 15.2 x 15.2 mm bolt-down CP package Ideal for radar & satellite communications

Additional information : QPA2308

 8,5 - 11 GHz 4 W GaN Power Amplifier

QPA1022D Features

Freq : 8.5 - 11 GHz PSAT : 36 dBm PAE : 45%

Power gain: 24 dB 2.65 x 1.25 mm die Ideal for radar, EW & communications

Additional information : QPA1022D

28 - 38 GHz 0,4 W GaN Power Amplifier

QPA2225D Features

Freq : 28 - 38 GHz PSAT : 26 dBm Gain : 23 dB

Flexible DC bias 1.65 x 0.67 mm die Ideal for radar, EW & communications

Additional information : QPA2225D

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